Oxygen Pipe Diffusion in Sapphire Basal Dislocation
نویسندگان
چکیده
منابع مشابه
Dislocation-pipe diffusion in nitride superlattices observed in direct atomic resolution
Device failure from diffusion short circuits in microelectronic components occurs via thermally induced migration of atoms along high-diffusivity paths: dislocations, grain boundaries, and free surfaces. Even well-annealed single-grain metallic films contain dislocation densities of about 1014 m-2; hence dislocation-pipe diffusion (DPD) becomes a major contribution at working temperatures. Whil...
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ژورنال
عنوان ژورنال: Journal of the Ceramic Society of Japan
سال: 2006
ISSN: 0914-5400,1882-1022
DOI: 10.2109/jcersj.114.1013